SHINCRON Co.,Ltd. JAPANESE VERSIONCHINESE VERSION
HOMEContact UsImportant Notices for Customers Using our Products
Thin Film Deposition InformationProduct InformationTechnical InformationQuality AssuranceCompany Information
RAS

BIS

CES

eCES

ACE

BES

BSC

BMS

SMC

PMC

OPM

Ion Source

Computer System for Film Deposition

Formation

Production on Orders

Obsolete Models

Information about used equipment
RF (Radio Frequency) Excitation Ion Source, Embedded Type
Features
A large current of up to 1.2A is available.
The structure of non-electrode discharge eliminates the risk of contamination.
Long continuous operation made possible by filamentless structure.
Auto-matching system for RF enables stable discharge.
Drastically reduces maintenance time.

RF Excitation Ion Source
Features
High frequency system enables stable discharge.
Longer maintenance intervals.
Operable for a long period even in an environment where reactive gas is used.
Uniform current density in broad area.
Suitable for an environment using IAD.

Hot-cathode Electron Impact (Kaufman) Ion Source
Features
Uniform ion current density.
Uniform ion energy.
Long-lived cathodes.
Available in highly vacuum environment.
Very small risk of contamination by a neutralizer.
Long-lived neutralizer.

Specification
@ NIS-175 RIS-120D KIS-80D
Ionization Method RF Excitation RF Electron Excitation (High Frequency Excitation) Hot-cathode Electron Impact (Kaufman)
Ionization Method 175mm 120mm 80mm
Shape of Electrodes Dome Dome Dome
Ion Energy 100-1000eV 100-1000eV 100-750eV
Total Current of Ion 1200mA 300mA 200mA
Outer Diameter Φ310 × H210 Φ200 × H732 Φ185 × H300
Neutralizer Current Max. 2000mA Max. 1000mA Max. 300mA


Click HERE for any inquiries about this product.
* The product specifications may be modified for improved performance without any notice.
For details, please contact our sales division.
(C) Copyright SHINCRON Co.,Ltd. All Rights Reserved. Personal informationImmunitySite map