Cluster type single wafer sputtering system application

Cluster type single wafer sputtering system application: semiconductor, electronic and PIC markets

Application:
Electron and electricity control

Features

  1. High-quality deposition of crystalline thin films under a low-temperature process
  2. Capability of film deposition at optimal cathode position and angle based on deposition conditions and material characteristics
  3. Effective mass production by a C-to-C cluster tool

Major applications

  • Deposition of functional thin films related to high-frequency filters and MEMS
  • Crystal-oriented films
    Piezoelectric materials / optical functional materials / metallic electrodes and so on
  • Film deposition related to PIC device
    Low roughness, High-quality crystalline thin film deposition, High-oriented film deposition

Specification outline

Load lock chamber -Wafer stage
Transfer chamber – Vacuum wafer transfer robot
Sputtering chamber
(Four chambers are connected as standard)
– Circular fully-eroded cathode (⌀ 8” target)
– Downward sputtering method
– Wafer heating mechanism (up to 600°C)
– Substrate bias mechanism
– Power source for sputtering: RF (13.56 MHz)/DC
– Power source for bias: RF (13.56 MHz) / DC
* RF superimposed DC is applicable
– Exhaust system: TMP x 1 ultralow-temperature trap, dry pump
– Ultimate vacuum < 2.0 x 10-5
– SEMI/GEM-compliant interface
Contact
We propose systems that meet
your requirements for functions
and applications.
Please feel free to contact us.
Sales Department
+81-45-650-2411
Operating hours: 9:00 – 17:00
[excluding Saturdays, Sundays, and holidays]
* Product specifications are subject to change for performance improvement without prior notice. For details, please contact our sales representatives.