Cluster type single substrate sputtering system for the semiconductor and electronic markets
A C-to-C handling-applicable cluster type single substrate sputtering system suitable for the semiconductor and electronics markets
- Application:
- Electron and electricity control
Features
- The deposition of crystalline thin films through high-temperature heating sputtering
- Control of film deposition by bias sputtering technology (such as stress control, step coverage-enhancing/filling film deposition, and so on)
- Achieves applicability to multiple purposes and high throughput by cluster platform
Major applications
- Deposition of functional thin films related to high-frequency filters and MEMS
- Crystal-oriented films
Piezoelectric materials / optical functional materials / metallic electrodes and so on - Bias sputtering
Step covering/ filling film deposition / low roughness / high density / stress control
Specification outline
| Load lock chamber | – Wafer cassette station |
|---|---|
| Transfer chamber | – Vacuum wafer transfer robot – Aligner |
| Sputtering chamber (Four chambers are connected as standard) |
– Circular fully-eroded cathode (⌀ 8” target) – Downward sputtering method |
| – Wafer heating mechanism (up to 600°C) – Substrate bias mechanism |
|
| – Power source for sputtering: RF (13.56 MHz) – 2.0 kW / 4.0 kW DC – Power source for bias: RF (13.56 MHz) / DC * RF superimposed DC is applicable |
|
| – Exhaust system: 14” TMP x 1 ultralow-temperature trap, dry pump – Ultimate vacuum < 2.0 x 10-5 |
|
| – SEMI/GEM-compliant interface |
Contact
We propose systems that meet
your requirements for functions
and applications.
Please feel free to contact us.
your requirements for functions
and applications.
Please feel free to contact us.
Sales Department
* Product specifications are subject to change for performance improvement without prior notice. For details, please contact our sales representatives.