Cluster type RAS method-based film sputtering system for the semiconductor and electronic markets
A C-to-C handling-applicable cluster type RAS method-based film deposition system suitable for the semiconductor and electronics markets
- Application:
- Electron and electricity control
Features
- Achieves the deposition of dielectric films at high throughputs using the load lock structure
- Enables step coverage by bias
- C-to-C handling suitable for wafer handling
- Enables overall film deposition on 8” substrates
Cooperation: Professor Hashimoto of Chiba University
Major applications
- SiO2 step covering/filling film deposition
- TC (Temperature Compensated)
- SAW temperature compensating films - Overall film deposition at high densities and low roughness
- Wafer bonding
- Various passivation films of SiO2 and SiN - Dielectric multi-layer films
- Acoustic multi-layer films for SMRs (Solid Mounted Resonators)
- Optical thin films for LEDs and LDs (Laser Diodes)
Specification outline
| Load lock chamber | – Wafer cassette station |
|---|---|
| Transfer chamber | – Vacuum wafer transfer robot – Aligner |
| Sputtering chamber (Up to two chambers can be connected) |
– Dual cathode (⌀ 12”) |
| – ICP plasma source – Substrate bias mechanism |
|
| – Rotary substrate stage (⌀ 6” x 25 pcs, ⌀ 8” x 20 pcs) | |
| – Exhaust system: 14” TMP x 2, ultralow-temperature trap, dry pump | |
| – SEMI/GEM-compliant interface |
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* Product specifications are subject to change for performance improvement without prior notice. For details, please contact our sales representatives.