Load lock type sputtering system for dielectric multilayer films
High functionality for the electronic device market mainly centered on dielectric multi-layer films
- Application:
- Electron and electricity control
Our RAS method was developed and made highly functional for electronic devices to meet the demands for sophisticated and higher frequency devices.
Features
- A system as the de facto standard for temperature compensated films necessary for TC (Temperature compensated)-SAW
- It is also expected to serve as a thin film deposition system for acoustic reflectors employed in SMRs (Solid Mounted Resonators), toward the achievement of higher frequency
Cooperation: Professor Hashimoto of Chiba University
Specification outline
Model | SLS-18 | SLS-27 |
---|---|---|
Substrate drum size | ⌀ 1,100 mm x 230 mm | ⌀ 900 mm x 400 mm |
Radical source | ICP RF power source | |
Sputtering source | Dual cathode, 18” x 5” planer cathode | Dual cathode, 27” x 5” planer cathode |
Exhaust system | [CH-1] Roughing unit [CH-2] 14-inch TMP x 2 Meissner trap Roughing unit |
[CH-1] Roughing unit [CH-2] 14-inch TMP x 4 Meissner trap Roughing unit |
Option | OPM-Z1 / rotary cathode / CH-1 target/ bias mechanism / SEMI/GEM-compatible interface |
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your requirements for functions
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* Product specifications are subject to change for performance improvement without prior notice. For details, please contact our sales representatives.